256 GB of storage UFS 2.0 for the future of Samsung Galaxy S8 – Frandroid

Samsung announced the mass production of 256GB of flash memory modules UFS 2.0 to smartphones and tablets. What afford to advertise within a year a probable Galaxy S8, or why not a Galaxy Note 6, with 256 GB of storage.

in February 2015, Samsung started mass production of flash memory modules UFS 2.0 in capacities of 32, 64 and 128GB. a few days later, the Korean giant unveiled the Galaxy S6 equipped with precisely these memory modules. This year, Samsung has achieved nearly the same ads, but in reverse. So last Sunday, the Korean giant has unveiled the Galaxy S7 and S7 edge with memory modules UFS 2.0 to 32, 64 and 128GB and this morning, Samsung unveils the new generation UFS 2.0 modules endowed with a capacity of 256 GB for “the next generation of high-end mobile devices” .

so we guess the Galaxy S7 will never see this module and it will be reserved for the Galaxy S8 which should, logically, be announced in one year, or may be the future Galaxy Note 6 might happen in the coming months.

An impressive speed

in terms of performance, the new module significantly surpass those of last year, with 45,000 and 40,000 IOPS (operations per second) read and write random, against 19 000 and 14 000 for the chip found in the Galaxy S7 . The rates are as monstrous as Samsung announces a sequential read speed of 850 MB / s against 260 MB / s sequential write, which is approaching the maximum bandwidth of the UFS 2.0 which is 1.2 GB / s. But what use all this power?

USB 3.0 approach

Samsung thinks of USB 3.0, which team currently almost any smartphone, especially because of the interference. The USB Type-C was supposed to fix this, but this port is still conspicuously absent in the majority of cases, particularly in Samsung as we explained the manufacturer invoking obscure reasons. The Korean giant yet speak of “future advent of USB 3.0 in mobile terminals that will allow much faster data transfers” . Samsung takes the example of a 5GB video that would take only 12 seconds to swap from one terminal to another. Finally USB Type-C USB 3.0 port on the Galaxy S8

V-NAND 3D

For the curious, the memory modules UFS 2.0 use the latest Samsung flash memory chips V-NAND Korean giant, which must match the 3D chip stacking up to 48 layers of flash memory and using TLC memory to store 3 bits per cell.